https://doi.org/10.15407/geotech2020.32.071 УДК 539.2 :621.315.548.0 : 612.029.62, 621.315.592 • Issue 4 (32) / 2020 • 71-76 pages   Levytskyi S.M. Abstract This work presents the guidance on the results of the development of a laser doping technique and the creation of diode structures based on Cd(Zn)Te semiconductors, due to its attractive physical characteristics. The elements of … Continue reading 4 (32) 8. DETECTORS BASED ON Cd(Zn)Te SEMICONDUCTORS FOR X-RAY AND GAMMA RADIATION REGISTRATION