Levytskyi S.M.

Abstract

This work presents the guidance on the results of the development of a laser doping technique and the creation of diode structures based on Cd(Zn)Te semiconductors, due to its attractive physical characteristics. The elements of this compound have relatively large atomic numbers, a significant cross section for photoelectric absorption, a sufficient band gap and, accordingly, can have a sufficiently high electrical resistance. All these are the advantages that make Cd(Zn)Te the main and promising material for nuclear detectors, which can operate at room temperature (without cooling) and, as numerous studies around the world show, intensive work is carried out on the design based on Cd(Zn)Te instruments for detecting and measuring x-ray and gamma radiation and imaging. The need for such a device is based on many important factors. One of the global problems of our time is the prevention of technological disasters, the elimination of their consequences and the prevention of terrorist acts. In Ukraine, solving these problems is of particular importance, since our state is one of the countries with a very degraded environment, in particular, due to radioactive contamination as a result of the Chernobyl disaster, ammunition disposal, technical problems in industry, etc. On the other hand, the solution of these problems causes intensive research all over the world in order to develop portable intelligent systems with the help of which it is possible to efficiently identify and distinguish dangerous objects and radionuclides, as well as to make an objective express analysis of the environment and materials for radioactivity. In addition to the necessary functional parameters, in particular, high energy resolution, these systems should be small in size, not energy-intensive in order to provide measurements for a long time and not require complex and special maintenance.

Key words: CdTe, CdZnTe, laser irradiation, doping, barrier structure, p-n junction, diode, detector.

 

Article

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